inchange semiconductor isc product specification isc n-channel mosfet transistor 60NF06 features drain current ?i d =60a@ t c =25 drain source voltage- : v dss = 60v(min) static drain-source on-resistance : r ds(on) = 0.016 (max) fast switching description suitable as primary switch in advanced high-efficiency isolated dc-dc converters for telecom and computer application. it is also intended for any applicati on with low gate charge drive requirements . applications high-efficiency dc-dc converters ups and motor control automotive absolute maximum ratings(t a =25 ) symbol parameter value unit v dss drain-source voltage 60 v v gs gate-source voltage-continuous 20 v i d drain current-continuous 60 a i dm drain current-single pluse (t p 10s) 240 a p d total dissipation @t c =25 110 w t j max. operating junc tion temperature 175 t stg storage temperature -65~175 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.36 /w r th j-a thermal resistance, junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc n-channel mosfet transistor 60NF06 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage v gs = 0; i d = 0.25ma 60 v v gs (th ) gate threshold voltage v ds = v gs ; i d = 0.25ma 2 4 v r ds( on ) drain-source on-resistance v gs = 10v; i d = 30a 0.016 i gss gate-body leakage current v gs = 20v;v ds = 0 100 na i dss zero gate voltage drain current v ds = 60v; v gs =0 v ds = 60v; v gs =0; t j = 125 1 10 a v sd forward on-voltage i s = 60a; v gs =0 1.3 v isc website www.iscsemi.cn
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